III-Nitride Materials and Devices

Heterogeneous integration and IC packaging

III-Nitride materials, specifically AlInGaN, are a class of semiconductor materials that are widely used in various optoelectronic devices such as LEDs (visible and UV), laser diodes, high-electron-mobility transistors (HEMTs), and power devices. These materials have attractive properties such as high electron mobility, high breakdown voltage, and high thermal stability, which make them suitable for high-power and high-temperature applications.

One of the most important applications of III-nitride materials is in the lighting field, where they are used to fabricate high-efficiency and high-brightness LEDs. These LEDs are highly energy-efficient and have a long lifespan, which makes them ideal for use in a wide range of applications, such as general lighting, displays, and communications.

In addition to lighting, III-nitride materials are also used in the fabrication of laser diodes, which are widely used in telecommunications, optical storage, and other applications. They are also used to fabricate power diodes and transistors, which are used in high-power electronic devices such as power supplies, inverters, and motor drives.

III-Nitride materials have a wide range of applications and have attracted a lot of attention due to their unique electronic and optical properties, making them an important area of research in semiconductor materials and device physics.

Highly Robust Integrated Power Electronics Packaging Technology

At CISEDS, we are dedicated to advancing the field of AlInGaN materials and their applications in various technologies. One area of focus is the growth and characterization of AlInGaN materials through metal-organic chemical vapor deposition (MOCVD). Our capabilities and research efforts in this area include the following:

TNSC MOCVD: We utilize the latest techniques in our Taiyo Nippon Sanso Corporation (TNSC) MOCVD to optimize the growth of AlInGaN materials. This approach allows us to achieve high-quality material growth at atmospheric pressure.
LED, laser, and power device growth: The AlInGaN materials grown at CISEDS are used in many applications, including LEDs, lasers, HEMTs, and power devices. Our research aims to optimize the growth conditions to achieve high-performance devices and explore novel designs.
Advanced characterization techniques: We employ a range of characterization techniques such as Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), Photoluminescence (PL) and thickness mapping, low-temperature PL, differential carrier lifetime, and Hall measurements to understand the properties of our AlInGaN materials fully. These techniques allow us to understand the fundamental properties of the materials and how they can be optimized for specific applications.

We are committed to conducting cutting-edge research on AlInGaN materials and their applications. Our research efforts focus on developing new growth techniques, optimizing material properties, and characterizing the materials using advanced techniques. This will enable us to achieve high-quality materials and devices that can be used in a wide range of applications.

In addition to our materials research, we also focus on AlInGaN device design and fabrication. Our team has access to the advanced fabrication capabilities at the NC State Nanofabrication Facility (NNF) to create a wide range of AlInGaN devices, including LEDs and power devices. We also utilize Silvaco TCAD modeling and in-house simulation tools to optimize device performance and predict the behavior of the devices we fabricate. Together, these efforts will drive innovation and advancements in AlInGaN materials and devices, benefiting a wide range of applications.

To evaluate the performance of these devices, CISEDS conducts wafer testing of power and LED devices. This includes IV, LIV, CV, CF, and EL differential carrier lifetime measurements. This research is critical to developing AlInGaN devices with improved performance, efficiency, and reliability.