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Heterogeneous integration and IC packaging

Heterogeneous IC integration involves the integration of different types of devices and materials, such as electronic, photonic, and mechanical components, on a single chip. This approach provides many benefits such as increased functionality, improved performance, and reduced power consumption. However, it also poses several challenges that need to be addressed.

One of the main challenges in heterogeneous IC integration is thermal management and heat dissipation. The integration of different types of devices and materials on a single chip leads to an increase in power density, which in turn generates more heat. This heat needs to be effectively dissipated in order to prevent thermal runaway and damage to the devices.

Another challenge is the integration of different materials and devices with different fabrication processes, which can lead to compatibility issues and increased fabrication complexity. Additionally, the integration of different types of devices and materials also leads to increased design complexity, as the interactions between the different components need to be carefully considered.

To address these challenges, the CISEDS research center will perform research in the area of heterogeneous IC integration. This research will focus on developing new techniques for thermal management and heat dissipation, as well as exploring new materials and fabrication processes that are compatible with different types of devices and materials. The center will also investigate new design approaches to simplify the integration of different types of devices and materials. The ultimate goal is to enable the integration of multiple functionalities on a single chip, which will lead to the development of new and advanced electronic systems for various applications.

Highly Robust Integrated Power Electronics Packaging Technology

The NCSU is performing research in the area of very high voltage (VHV) power electronics packaging for ultra-harsh environments that use Wide Band Gap (WGB) power semiconductor devices, specifically SiC (and GaN for gate drivers).

The main challenges in this area are dealing with high electric fields that require tailored conductor patterns for field management, minimizing intercoupling capacitances between switching devices, and providing electrically isolated thermal management. One potential solution that is being explored is the use of “substrate-less” power module substrates. This approach utilizes highly thermally conductive organic dielectrics, specifically Epoxy Resin Composite Dielectric (ERCD) material, to make power semiconductor interconnections.

This material allows for very thin electrically isolating layers to improve electrical conductance, while also allowing for the use of low modulus material for higher reliability. Additionally, this material can operate continuously at 300ºC, providing an opportunity for early exploration of packaging for WBG devices that are trending towards higher temperatures.