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At North Carolina State University, Prof. Daryoosh Vashaee, Prof. Mehmet Ozturk, and Prof. Victor Veliadis have experience working in centers dedicated to flexible and wearable electronics, and wide bandgap power electronics. They have also been involved in many research projects related to packaging and thermal management of power electronics.

At Purdue University, Prof. Chen, Prof. Shakouri and Prof. Appenzeller have experience working on advanced materials and devices for power electronics, logic and memory, and low-energy computing. They have also been involved in many research projects related to large-scale manufacturing and device integration.

The CISEDS team members have access to state-of-the-art facilities at Birck Nanotechnology Center and The NC State Nanofabrication Facility. Additionally, the team members are also affiliated with Research Triangle Nanotechnology Network (RTNN) and several other innovation hubs for semiconductors and nanotechnology research & commercialization, which provide them with access to a wide range of research-grade equipment. 

The current members are (in alphabetical order):

Kaveh Ahadi is an Assistant Professor at the Department of Physics and Materials Science & Engineering at NC State University. He received his Ph.D. from the University of California, Santa Barbara, in 2019. His group uses molecular beam epitaxy and RF sputtering to grow and manipulate complex oxides and quantum matter. His group is interested in electronic transport phenomena and novel electronic device applications of high-quality thin films and heterostructures. He is working toward harnessing epitaxial strain and broken symmetry inherent to the abrupt heterointerfaces to construct metastable electronic structures with enhanced electrical properties for novel device applications. His group specifically focuses on integrating complex oxides and wide bandgap semiconductors for power electronics.

Muhammad Alam (Jai N. Gupta Endowed Chair professor, Purdue-ECE) is an expert on the physics and technology of semiconductor devices. From 1995 to 2003, he was with Bell Laboratories, Murray Hill, NJ, working on optoelectronic integrated circuits. Since joining Purdue in 2004, Dr. Alam has published over 350 papers on biosensors, transistors, solar cells, and flexible electronics. He is a fellow of IEEE, APS, and AAAS. His awards include the 2006 IEEE Kiyo Tomiyasu Medal for contributions to device technology, the 2015 SRC Technical Excellence Award for fundamental contributions to reliability physics, and the  2018 EDS Education Award for contributions to graduate education through his web-enabled courses on semiconductor devices, reliability physics, nanobiosensors, and solar cells.
Aram Amassian is a materials scientist and engineer who has co-authored more than 210 publications in peer-reviewed journals and has been a Web of Science Highly Cited Author since 2021. Amassian was a founding faculty member of the King Abdullah University of Science and Technology (KAUST) in 2009 and joined NCSU in 2018, where he was recently appointed Professor (2021). His research is in printed electronics, optoelectronics, and photovoltaics, with an emphasis on materials formulation, processing, and devices.  He is a pioneer in advanced characterization during solution-processing of organic and hybrid semiconductor materials used in printed and flexible electronics and photovoltaics and is best known for introducing in situ x-ray and optical diagnostics during coating processes. His research group now develops and utilizes robotics combined with characterization and artificial intelligence to establish formulation-process-structure-property relationships in printable semiconductor materials and devices, focusing primarily on stability, efficiency, and scalable and eco-friendly manufacturability. Amassian was elected Fellow of the Optical Society of America (2021) and inducted as a Member of the Royal Society of Chemistry (2020). He is co-founder of AWOS Tech and co-founder and CTO of Bay Nano Technologies.
Jeorg Appenseller received the M.S. and Ph.D. degrees in physics from the Technical University of Aachen, Germany, in 1991 and 1995. His Ph.D. dissertation investigated quantum transport phenomena in low dimensional systems based on III/V heterostructures. He worked for one year as a Research Scientist in the Research Center in Juelich, Germany, before becoming an Assistant Professor with the Technical University of Aachen in 1996. During his professorship, he explored mesoscopic electron transport in different materials, including carbon nanotubes and superconductor-semiconductor-hybrid devices. From 1998 to 1999, he was with the Massachusetts Institute of Technology, Cambridge, as a Visiting Scientist, exploring the ultimate scaling limits of silicon MOSFET devices. From 2001 until 2007, he had been with the IBM T.J. Watson Research Center, Yorktown, NY, as a Research Staff Member mainly involved in investigating the potential of carbon nanotubes and silicon nanowires for future nanoelectronics. Since 2007 he has been a Professor of Electrical and Computer Engineering at Purdue University and Scientific Director of Nanoelectronics in the Birck Nanotechnology Center. In 2014 he became the Barry M. and Patricia L. Epstein Professor of Electrical and Computer Engineering. His current interests include novel devices based on low-dimensional materials as nanowires, nanotubes, graphene, and di-chalcogenides.
Shihong Chen is a Professor of Electrical and Computer Engineering at Purdue University. Her research focuses on understanding the physical properties of nano-materials, fabricating nanostructures with desired properties and functionalities for electronic, spintronic, and optoelectronic applications. From 2004 to 2010, she was with the IBM T.J. Watson Research Center working on designing and fabricating high-performance carbon-based electronics. She was appointed as the manager of the Carbon Technology Group between 2008 and 2010. She has become the director of the SRC nCORE NEW LIMITS Center funded by Semiconductor Research Corp. and NIST since 2018 and the Associated Director of Research for Birck Nanotechnology Center in 2019. She is currently serving as the General Chair of the Device Research Conference and Program Co-Chair of the International Interconnect Technology Conference.
Ramón Collazo is an Associate Professor in the Department of Materials Science and Engineering (MSE) at North Carolina State University (NCSU), researching the growth and characterization of wide band gap semiconductor thin films for optoelectronics and power applications. He co-directs the Wide Bandgaps Laboratory at NCSU. He received his B.S. in Physics from the University of Puerto Rico, San Juan, and his Ph.D. in MSE at NCSU in 2002. His current research involves the development of the growth and characterization technologies for III-nitrides, especially the Al-rich AlGaN alloy system for UV optoelectronics. This includes the development of UV light-emitting diodes, laser diodes, and related optoelectronics. He was awarded the NSF CAREER award on point defects in these wide bandgap semiconductors. He has published over 200 research articles in refereed journals, holding 11 patents, 5 exclusively licensed disclosures, and numerous national and international conferences presentations.
Michael Dickey has expertise with liquid metals for soft and stretchable devices, interfacial phenomena, 2D oxides, energy harvesting, and nano-/micro-fabrication. He received a B.S. in Chemical Engineering from Georgia Institute of Technology (1999) and a Ph.D. from the University of Texas (2006, Prof Grant Willson). From 2006-2008 he was a postdoctoral fellow in the lab of Prof George Whitesides at Harvard University. He is currently the Camille and Henry Dreyfus Professor in the Chemical & Biomolecular Engineering Department at NCSU.  He completed a sabbatical at Microsoft in 2016. Michael’s research interests include soft matter (liquid metals, gels, polymers) for soft and stretchable devices (electronics, energy harvesters, textiles, and soft robotics).
Douglas C. Hopkins (Professor, NCSU-ECE) directs the lab. for Packaging Research in Electronic Energy Syst. (PREES), is a faculty in the FREEDM Syst. Ctr., and affiliate faculty in Ctr. for Additive Mfg. and Logistics (CAMAL). His Ph.D. is from Virginia Tech (Dr. Fred Lee), has over 20 years in academia and industry, over 150 publications, and is an IMAPS Fellow.
David Janes received the B.A. degree in Physics from Augustana College in 1980 and the B.S.E.E., M.S.E.E. and Ph.D. degrees from the University of Illinois at Urbana-Champaign in 1980, 1981, and 1989, respectively.  From 1981 to 1985, he worked as a research scientist at the Research Division of Raytheon Company, working on microwave devices and integrated circuits.  Since 1989, he has been at Purdue University, where he is a Professor of Electrical and Computer Engineering. From 2001-2003, he was Research Program Coordinator for the Birck Nanotechnology Center in Purdue’s Discovery Park.  From 2003-2007, he was Technical Director of the Institute for Nanoelectronics and Computing, a NASA-supported research and education center. In this role, he was responsible for the technical direction of center research, director/recruiter for the graduate fellowship program, and co-director of the undergraduate research program. From 2012-2017, he served as a Global Affairs Fellow and Faculty Coordinator of Institutional Partnerships in Purdue’s Office of Corporate and Global Partnerships, focusing on global engagement strategies and institutional partnerships.  His current research projects include nanowire and other low-dimensional transistors for low-noise and thin-film electronics, 2-D/1-D hybrid systems for transparent conductors and optical components, and chemical/biological sensors.
Ki Wook Kim (Professor, NCSU-ECE, fellow of APS) has well-noted expertise in a broad range of topics from quantum materials physics to semiconductor device modeling and extensive experience in related numerical approaches such as first-principles calculations and transport simulations. His current research interests include theoretical exploration of heterogeneous material combinations and structures in 2D and the ultra-wide bandgap semiconductors for performances beyond the state-of-the-art.
Fred A. Kish (Distinguished M.C. Dean Professor, NCSU-ECE). The research of semiconductor interfaces has been a core theme in Professor Fred Kish’s career. His success in these areas has been the core of his leadership in developing and commercializing three multi-billion-dollar product platforms: Al-bearing III-V native-oxide VCSELs, wafer-bonded transparent-substrate AlGaInP LEDs, and optical system-on-a-chip (SOC) InP-based photonic integrated circuits. Dr. Kish is a member of the National Academy of Engineering and a Fellow of the OSA and IEEE.  He has been awarded the IEEE Sarnoff Medal, the IEEE LEOS Engineering Award, and OSA Lomb Award.
Veena Misra (Distinguished Professor, NCSU-ECE, IEEE Fellow) is the director of the NSF Nanosystems ERC on Advanced Self-Powered of Integrated Sensors and Technologies (ASSIST). She received her B.S., MS, and Ph.D. degrees in electrical engineering from North Carolina State University, Raleigh. She has authored or co-authored over 200 papers in the areas of state-of-the-art wide-bandgap GaN and SiC devices, low-power CMOS devices, alternative high-mobility substrates, nanoscale magnetics, and energy-harvesting. Dr. Misra received the 2001 NSF Presidential Early CAREER Award, the 2011 Alcoa Distinguished Eng. Research Award, and the 2007 Outstanding Alumni Research Award.
Dallas T. Morisette is a Research Assistant Professor in the Elmore Family School of Electrical and Computer at Purdue University. He received his Ph.D. in electrical and computer engineering from Purdue in 2001, then gained experience in optoelectronics, BioMEMs, and 2D materials through a series of startup ventures. In 2010 he returned to Purdue as a research scientist, where he studied SiC MOS interfaces and was appointed to his current position in 2014. He has co-authored over 40 journal articles and conference presentations and holds three patents. His current research interests include solid-state device physics, MOS interfaces, wide-bandgap semiconductors, and power electronic devices.
John F. Muth (Professor, NCSU-ECE), (B.S. Applied Eng. Physics Cornell, PhD Physics NCSU), is an expert in novel materials for photonics and electronics, making careful optical and thermal measurements of emerging (ultra) wide bandgap materials, and using those materials to make light emitters, detectors, and biosensors and amorphous oxide transparent electronics. His technical interests include understanding light-matter interactions at the metal-semiconductor interface and the role of defects and heat extraction of devices. He has extensive experience with entrepreneurship and innovation, working with industry, co-teaching a product innovation lab, co-founding the ASSIST NSF ERC, and as P.I. starting PowerAmerica, a National Manufacturing Institute. He has over 200 publications, including 11 patents.
Jagdish (Jay) Narayan (Professor, NCSU-MSE, Member of the National Academy of Engineering) is internationally known for his pioneering contributions in laser annealing and pulsed laser deposition, defects and interfaces, domain matching epitaxy for novel thin-film heterostructures across the misfit scale, and new materials with unique features properties. His research on defects and interfaces focuses on the structure-property of thin-film heterostructures needed for improved and novel solid-state devices. Narayan’s most recent research pertains to diamond and c-BN based thin film heterostructures for next-generation high-power and high-frequency devices, including the discovery of Q-carbon and Q-BN and direct conversion of carbon into diamond and h-BN into c-BN at ambient temperatures and pressures in air. He has published >500 journal papers, 48 U.S. Patents, and 9 edited books, with over 35,000 citations.
Mehmet Öztürk’s research interests center around semiconductors and advanced materials and processes for new devices.  His early work focused on novel processes for advanced CMOS integrated circuits, emphasizing applications of Group IV epitaxy (Si, Si, Si1-xGex, and Si1-xCx) in channel and source/drain engineering and self-aligned silicide/germanosilicide contacts to ultra-shallow source/drain junctions.  His current research interests center around flexible electronics with an emphasis on flexible thermoelectric devices.  His group was the first to demonstrate the use of EGaIn liquid metal interconnects in an electronic device application. Prof. Ozturk was named a fellow of IEEE in 2009 for his contributions to Group IV epitaxy in CMOS integrated circuits.
Spyridon Pavlidis is an Assistant Professor of Electrical Engineering at NCSU. His research focus lies in the development of electronic devices using novel semiconductors. This includes III-Nitride wide and ultra-wide bandgap semiconductor devices for R.F. and power conversion and 2D materials for flexible and low-voltage electronics. Dr. Pavlidis’s publications cover TCAD device design, material processing, interface characterization, packaging, thermal effects, and amplifier design.
Ali Shakouri is a Professor of Electrical and Computer Engineering and Director of Birck Nanotechnology Center at Purdue University. His research focuses on electrothermal transport in electronic devices and thermoelectric energy conversion. He has commercialized thermoreflectance imaging for thermal characterization of electronic devices and integrated circuits with submicron spatial, 800ps time, and 10mK temperature resolutions. He has used thermoreflectance to study electromigration lifetime and reliability of nanoelectronics and power semiconductor devices. His recent work focuses on optimizing printed electrochemical sensors for agriculture and healthcare applications.

Daryoosh Vashaee (Professor, NCSU-ECE) has over 20 years of experience in engineering interfaces for thermal energy conversion systems. His work with Ali Shakouri at the ONR MURI TECC resulted in ErAs rare earth and ScN/ZrWN heterostructures for thermoelectric energy conversion. His collaborative at MIT on nanostructured BiSbTe opened a new landscape for developing high-efficiency thermoelectric materials with over 5000 citations. His work on the spin and quantum-driven thermoelectrics lead to spin-driven zT>1, and the discovery of the bipolar paramagnon drag and paramagnetic spin-transition entropy thermopower. He received his Ph.D. in ECE (Ali Shakouri – CISEDS member, UCSC, 2004) and worked as a postdoc at MIT (Mildred Dresselhaus and Gang Chen). He led the thermoelectric materials research in ASSIST ERC (self-powered wearable and electronics for health monitoring). He has published over 300 papers with over 15,000 citations in the area of energy conversion materials and devices.

Victor Veliadis (Professor, NCSU-ECE) is the Chief Executive and CTO of PowerAmerica, a U.S. Department of Energy WBG power electronics Manufacturing Institute. In this role, he manages an annual budget in excess of $30 million that he strategically allocates to over 35 industrial and University projects to accelerate WBG manufacturing, workforce development, job creation, and clean energy. He is an IEEE Fellow and IEEE EDS Distinguished Lecturer. He has given over 70 invited presentations/tutorials and keynotes at major conferences in India, Korea, China, Europe, and the U.S. He has 27 issued U.S. patents, 6 book chapters, and over 120 peer-reviewed technical publications. Prior to entering academia and taking an executive position at Power America in 2016, he spent 21 years in the semiconductor industry, where his work included design, fabrication, and testing of 1-12 kV SiC SITs, JFETs, MOSFETs, Thyristors, JBS, and PiN diodes, and GaN devices for military radar amplifiers, as well as financial and operations management of a commercial semiconductor fab. He received the B.S. degree from the National Technical University of Athens, Greece, in 1990, and the M.S. and Ph.D. degrees in Electrical and Computer engineering from Johns Hopkins University, Baltimore, MD, USA, in 1992 and 1995, respectively.
Jonathan Wiere (Professor, NCSU-ECE) has over 20 years of experience in semiconductors and is recognized for his seminal contributions to solid-state lighting. Wierer received his Ph.D. in ECE (UIUC, 1999). Research highlights include developing the first high-power (1 Watt) flip-chip III-nitride LED and photonic crystal LEDs at Lumileds Lighting. He also made the ground-breaking proposal to use laser diodes as an ultra-efficient light source at Sandia National Laboratories. One research direction at NCSU is wide bandgap III-nitride power devices, particularly the materials science and devices enabled by the thermal oxidation of AlInN. He has published over 180 journal articles and conference presentations and holds 42 patents, predominantly related to wide-bandgap, III-nitride devices.
Peide Ye (Richard J. and Mary Jo Schwartz Professor, Purdue-ECE) is expert on atomic layer deposition and dielectric integration on channel materials, including III-V, Ge, 2D materials, and complex oxides. In this project, he will contribute to atomic layer deposition dielectrics on ultra-wide-bandgap semiconductor 3D transistors. He received the 2017 Sigma Xi Research Award and the 2018 Arden L. Bement Jr. Award. He was also recognized as the Highly Cited Researcher among 6000 worldwide in all fields. At Purdue University, Ye has installed nine commercial ALD reactors dedicated to nanoelectronics and MOS research. Ye will use his extensive experience on ALD high-k dielectric, ALD ferroelectric dielectric, and ALD oxide semiconductor channels and their integration, fabricating the state-of-the-art GaN, β-Ga2O3, and In2O3 devices with proposed interface engineering. Ye group has demonstrated the deposition of Al2O3, HfO2, ZrO2, Ga2O3, LaLuO3, LaAlO3, LaYO3, MgCaO for high-k dielectrics, and HfZrO2 currently for ferroelectrics and their integration on III-V, Ge, and 2D materials. The III-V substrates that have been studied thus far are GaAs, InGaAs, InAs, GaN, InGaN, AlGaN, InSb, GaSb, and InP.

Aram Amassian is a materials scientist and engineer who specializes in emerging semiconductor materials for printed and flexible electronics. He is co-director of the interdisciplinary Carbon Electronics Cluster and 6,000 sq ft ORaCEL facilities which serve 100 faculty, researchers and students across the Colleges of Engineering and Sciences working in various areas of emerging semiconductors. Amassian has co-authored more than 210 publications in peer-reviewed journals and is a Highly Cited Author since 2020 (Web of Science/Clarivate). He was a founding faculty at the King Abdullah University of Science and Technology (KAUST) in 2009 and joined NCSU in 2018, where he was appointed to the rank of Professor in 2021. He is a pioneer in solution-processing of thin film organic and hybrid semiconductor materials where he developed advanced in situ and inline characterization techniques. His research group now focuses on automation of printed electronics research and development through the design of robotic printed electronic platforms combined with inline diagnostics and artificial intelligence with the aim of enabling material-to-device co-design and accelerated prototyping of printed electronics. Amassian was elected Fellow of Optica (Optical Society of America) in 2021 and Fellow of the Royal Society of Chemistry in 2022. He is co-founder and CTO of Bay Nano Technologies which specializes in autonomous R&D and nanomanufacturing of semiconductor and energy material technologies.

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